[obsidian] vault backup: 2025-02-06 18:01:36[
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|  | エキシマレーザー 93 nm (ArF) and 248 nm (KrF) | ||||||
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|  | ファイバーレーザーが1000nm、CO2レーザーが10000nmくらいのオーダー | ||||||
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|  | 低温ではあるけど真空は必要 | ||||||
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| %% Import Date: 2023-08-10T15:39:03.591+09:00 %% | %% Import Date: 2023-08-10T15:39:03.591+09:00 %% | ||||||
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|  | ##### A performance comparison between honey and water as electrolytic dielectrics for ZnO liquid-gated transistors | ||||||
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|  | https://link.springer.com/article/10.1007/s00339-023-06565-6 | ||||||
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|  | ![[img/Pasted image 20250206174905.png]] | ||||||
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|  | なぜ蜂蜜を誘電体に使おうと思ったのか、、、 | ||||||
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|  | Sweet Electronics: Honey-Gated Complementary Organic Transistors and Circuits Operating in Air | ||||||
|  | https://onlinelibrary.wiley.com/doi/full/10.1002/adma.202103183 | ||||||
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|  | https://phys.org/news/2017-09-honey-cost-effective-non-toxic-substitute-graphene.html | ||||||
| @@ -40,22 +40,10 @@ https://www.jstage.jst.go.jp/article/vss/62/7/62_20180376/_pdf/-char/ja | |||||||
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| https://pubs.acs.org/doi/full/10.1021/nn504420r | https://pubs.acs.org/doi/full/10.1021/nn504420r | ||||||
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| ##### A performance comparison between honey and water as electrolytic dielectrics for ZnO liquid-gated transistors |  | ||||||
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| https://link.springer.com/article/10.1007/s00339-023-06565-6 |  | ||||||
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| なぜ蜂蜜を誘電体に使おうと思ったのか、、、 |  | ||||||
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| Sweet Electronics: Honey-Gated Complementary Organic Transistors and Circuits Operating in Air |  | ||||||
| https://onlinelibrary.wiley.com/doi/full/10.1002/adma.202103183 |  | ||||||
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| https://phys.org/news/2017-09-honey-cost-effective-non-toxic-substitute-graphene.html |  | ||||||
| ##### Effect of the gate electrodes/water interface on the performance of ZnO-based water gate field-effect transistors | ##### Effect of the gate electrodes/water interface on the performance of ZnO-based water gate field-effect transistors | ||||||
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| https://www.sciencedirect.com/science/article/abs/pii/S1369800122005741 | https://www.sciencedirect.com/science/article/abs/pii/S1369800122005741 | ||||||
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| ##### High-mobility low-temperature ZnO transistors with low-voltage operation(2010) | ##### High-mobility low-temperature ZnO transistors with low-voltage operation(2010) | ||||||
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| https://doi.org/10.1063/1.3428357 | https://doi.org/10.1063/1.3428357 | ||||||
| @@ -76,14 +64,10 @@ https://www.sciencedirect.com/science/article/pii/S0040609000017879 | |||||||
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| https://doi.org/10.1016/j.mseb.2010.07.001 | https://doi.org/10.1016/j.mseb.2010.07.001 | ||||||
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| [[スクリーンプリントでのトランジスタ]] |  | ||||||
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| ##### Synthesis of ZnO sol–gel thin-films CMOS-Compatible | ##### Synthesis of ZnO sol–gel thin-films CMOS-Compatible | ||||||
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| https://pubs.rsc.org/en/content/articlehtml/2021/ra/d1ra02241e | https://pubs.rsc.org/en/content/articlehtml/2021/ra/d1ra02241e | ||||||
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| ##### Fabrication of Flexible Metal Oxide Thin Film Transistor by Indigenously Developed Spray Pyrolysis Unit | ##### Fabrication of Flexible Metal Oxide Thin Film Transistor by Indigenously Developed Spray Pyrolysis Unit | ||||||
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| https://iopscience.iop.org/article/10.1149/08801.0129ecst/meta | https://iopscience.iop.org/article/10.1149/08801.0129ecst/meta | ||||||
| @@ -95,3 +79,9 @@ https://iopscience.iop.org/article/10.1088/1742-6596/1455/1/012023/pdf | |||||||
| PVAはむしろDielectricとして使ってる。0.5g/10mlなので50g/1000ml 5wit % | PVAはむしろDielectricとして使ってる。0.5g/10mlなので50g/1000ml 5wit % | ||||||
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| つまり10wit% PVAなら5ml+DIwater 5mlでいいのかな | つまり10wit% PVAなら5ml+DIwater 5mlでいいのかな | ||||||
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|  | 蒸着なしでできる方法があればなー | ||||||
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|  | ## [[蜂蜜誘電体トランジスタ]] | ||||||
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|  | ## [[スクリーンプリントでのトランジスタ]] | ||||||
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